| PART |
Description |
Maker |
| HMC215LP411 HMC215LP4E |
GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.7 - 4.0 GHz
1700 MHz - 4000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 11 dB CONVERSION LOSS-MAX
|
Hittite Microwave Corporation
|
| UNCL-L1 |
Plug-In, Low Noise Active Mixer (Level -4(LO Power -4 dBm) 10 to 500 MHz) 10 MHz - 500 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 8.5 dB CONVERSION LOSS-MAX
|
Mini-Circuits
|
| AD8344 AD8344ACPZ-WP AD8344ACPZ-REEL7 AD8344-EVAL |
400MHz to 1.2GHz Active Receive Mixer
Active Receive Mixer 400 MHz to 1.2 GHz
|
AD[Analog Devices]
|
| HSB88WS |
Schottky Barrier Diodes for Detection and Mixer
Silicon Schottky Barrier Diode for Balanced Mixer
|
HITACHI[Hitachi Semiconductor]
|
| 1N415GM 1N21WG 1N416G 1N415H |
Diode RF Mixer PN Mixer
|
New Jersey Semiconductor
|
| SGD-100 |
C to X Band/ Mixer/ Modulator Applications
GaAs Schottky Barrier Diode（C to X Band, Mixer, Modulator Applications应用于C到X带宽，混频器和调制器的砷化镓肖特基势垒二极管) 砷化镓肖特基二极管（C到X波段，搅拌机，调制器应用）（应用于荤到X带宽，混频器和调制器的砷化镓肖特基势垒二极管
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| AD831 |
Low Distortion Mixer
High-Performance, Low Distortion 500-MHz Mixer
|
Analog Devices, Inc.
|
| ESMD-169 ESMD-169TR |
1-3500 MHz, surface mount mixer, RF power 50mW
E-Series Surface Mount Mixer 1 - 3500 MHz
MICRO TERMINAL STRIP CENTERLINE: .050" (1,27MM) E系列表面贴装混合1 - 3500兆赫
|
MA-Com
MACOM[Tyco Electronics]
Littelfuse, Inc.
|
| 1N53 |
SILICON MIXER DIODE SILICON, KA BAND, MIXER DIODE, DO-36
From old datasheet system
|
Advanced Semiconductor, Inc.
|
| 1N23WG ASI1N23WG |
SILICON MIXER DIODE SILICON, X-KU BAND, MIXER DIODE, DO-23
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| PT2390 PT2390-S |
Echo IC with Built in Michrophone Amplifier and Output Mixer
Echo IC with Built-in Microphone Amplifier & Output Mixer
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3711Z with Lead Free Packaging
|
Princeton Technology Co...
Princeton Technology Corporation
PTC
|
